双面Schottky势垒型GaAs粒子探测器特性  

Characteristics of Double Schottky Barrier GaAs Particle Detectors

作　　者：邵传芬[1] 史常忻[1] 

机构地区：[1]上海交通大学微电子技术研究所,上海200030

出　　处：《Journal of Semiconductors》2000年第8期792-797,共6页半导体学报（英文版）

基　　金：上海市自然科学基金资助项目

摘　　要：双面肖特基势垒型 Ga As粒子探测器由半绝缘砷化镓材料制成 ,器件结构为金属 -半导体-金属结构 ,该探测器能经受能量为 1 .5Me V、剂量高达 1 0 0 0 k Gy的电子、50 0 k Gy的 γ射线、β粒子、X射线等粒子的辐照测试 ,辐照后器件击穿曲线坚挺 ,反向漏电流最低为 0 .48μA.器件的另一特征是其反向漏电流与 X射线的照射量呈线性关系 .该探测器在 2 4 1Am( Eα=5.48Me V) α粒子辐照下 ,其最大的电荷收集率和能量分辩率分别为 45%和 7% .在由 90 Sr( Eβ=2 .2 7Me V)发出的 β粒子辐照下 ,探测器有最小的电离粒子谱 .A comprehensive characteristic of new GaAs particle detectors is presented. Double Schottky barrier GaAs particle detectors are made of semi\|insulating GaAs material, so the device is of a metal\|semiconductor\|metal structure. As an irradiation test, the detectors have been subjected to 1000kGy of 1 5MeV electrons, 500 kGy gammas, β particles and X\|ray. After the irradiation, the breakdown curve of the device is strong, and the minimum reverse leakage current is 0.48μA. The other character of the device is that the reverse leakage current is linearly related to the irradiation intensity of X\|ray. The highest CCE and FWHM of the detectors are 45% and 7% respectively at the irradiation of α particles from 241 Am ( E \-α=5 48MeV). A minimum ionized particle spectra can be observed at 2 27 MeV β particles from 90 Sr. The detectors also show evident response for the light.

关 键 词：粒子探测器 Schottky势垒 砷化镓 

分 类 号：TN304[电子电信—物理电子学]