热壁LPCVD设备TEOS工艺炉管的使用与维护  

Operation and Maintenance of the TEOS Process Tube on Hot Wall LPCVD

作　　者：吴海[1] 

机构地区：[1]中国电子科技集团公司第十三研究所,石家庄050051

出　　处：《半导体技术》2012年第10期786-789,共4页Semiconductor Technology

摘　　要：通过介绍热壁LPCVD的TEOS工艺淀积SiO2薄膜的原理,分析了在淀积薄膜的过程中经常遇到的薄膜均匀性等方面的问题。重点分析了硅片中心与石英管轴心所处的相对位置对片内薄膜均匀性的影响关系、石英舟的位置以及恒温区的温度控制对片间均匀性的影响关系,并详细地分析、给出了具体的调整方法。对于该工艺炉管在实际的使用过程中经常遇到的一些故障现象,分析了产生故障的原因并提出了解决方法。最后对TEOS工艺炉管在日常使用过程中的保养和维护给出了一些建议。Through the introduction of the principle of SiO2 films deposition by TEOS process on hot wall LPCVD,some questions about the uniformity of films during deposition were analyzed.The effects of uniformity in one wafer about the comparative position of the center of wafer and axis of the quartz tube were analyzed.The effects of the uniformity in wafer to wafer about boats positions and temperatures of the flat zone were also analyzed,and some adjusting ways were provided.The reasons of some troubles met during practical operation of this process tube were analyzed and the solutions were provided.Finally,some suggestions about the maintenance of the TEOS process tube in daily operation were given.

关 键 词：热壁 淀积 薄膜 均匀性 维护 

分 类 号：TN305[电子电信—物理电子学]