L波段高功率密度LDMOS脉冲功率测试方法  

Pulse Power Testing Method of L-Band High Power Density LDMOS

作　　者：王帅[1] 李科[1] 丛密芳[1] 杜寰[1] 韩郑生[1] 

机构地区：[1]中国科学院微电子研究所,北京100029

出　　处：《半导体技术》2012年第10期819-823,共5页Semiconductor Technology

摘　　要：报道了在工作电压50 V、频率1.2 GHz下,功率密度1.2 W/mm射频LDMOS功率器件的研制结果。由于大功率LDMOS功率器件输入阻抗小,在50Ω负载牵引系统下测试容易出现低频振荡,严重损坏待测器件。为了消除这种低频振荡,更好地进行功率测试,研究采用了直通-反射-传输线(TRL)低阻抗测试夹具。此种夹具可以很好地抑制低频率的功率增益,消除低频振荡;而且使阻抗调节器获得更多的低阻抗点,提高负载牵引系统测试的准确度。在低阻抗的负载牵引系统测试环境下,1.2 GHz下,脉冲输出功率在1 dB压缩点为109.4 W,功率密度达到1.2 W/mm。A research and development results of 1.2 W/mm pulse power density silicon LDMOS were reported,which operated at 1.2 GHz,50 V.For the impedance of high power LDMOS devices was very low,and the low frequency oscillation usually appeared in 50 Ω load-pull test system,which damaged the device seriously.In order to eliminate the oscillation and be better for power test,thru-reflect-line（TRL） low impedance test fixture was used.It can efficiently inhibit the low frequency power gain,and eliminate the low frequency oscillation.It can also make tuner gain more low impedance points,improve the accuracy of load-pull testing system.In low impedance load-pull testing environment,output power at 1 dB compression point can reach as much as 109.4 W at 1.2 GHz,and power density is 1.2 W/mm.

关 键 词：横向双扩散场效应管器件 L波段 功率密度 脉冲功率 TRL低阻抗测试夹具 

分 类 号：TN386.1[电子电信—物理电子学]