ESD保护低噪声放大器的分析与设计  

Analysis and Design of Low Noise Amplifier with ESD Protection

作　　者：段炼[1] 黄伟[2] 马成炎[1,2] 叶甜春[1] 

机构地区：[1]中国科学院微电子研究所,北京100029 [2]杭州中科微电子有限公司,杭州310053

出　　处：《微电子学》2012年第5期613-616,621,共5页Microelectronics

基　　金：核高基重大专项(2009ZX01031-002-008)

摘　　要：针对封装和ESD寄生对源极电感反馈结构低噪声放大器的影响,进行了详细的理论分析。在已发表文献的基础上,加入对ESD寄生引起的输入匹配网络改变的考虑,给出了新的噪声系数公式。根据分析结果,提出设计时的考虑。采用0.18μm CMOS工艺,设计了一款GPS L1波段的单端低噪声放大器。测试结果显示,电路增益达到18dB,噪声系数为2.2dB;在1.8V电压下,电流消耗为4.5mA。Effects of parasitics of package and ESD devices on inductively degenerated low-noise amplifier were analyzed in detail. Based on published works, change of input matching networks due to parasitics of ESD devices was taken into considerations, and a new noise figure formula was presented. Based on the analysis and formula, design considerations were proposed. An LNA with ESD protection for GPS L1 band was designed using 0.18 t^m CMOS process. Measurement made on the packaged device showed that the LNA had a gain of 18 dB and an NF down to 2.2 dB. The circuit consumed 4.5 mA of current from 1.8 V supply.

关 键 词：GPS接收机 低噪声放大器 ESD保护 

分 类 号：TN732[电子电信—电路与系统]