一种大规模闪存灵敏放大器的多相位预充方法  

Multi-Phase Precharge Method for Sensing Amplifiers in Large-Capacity Memory

作　　者：张君宇[1] 张满红[1] 霍宗亮[1] 刘璟[1] 刘阿鑫[1] 刘明[1] 

机构地区：[1]中国科学院微电子研究所纳米加工与新器件集成技术实验室,北京100029

出　　处：《微电子学》2012年第5期632-636,共5页Microelectronics

基　　金：国家重点基础研究发展(973)计划基金资助项目(2011CBA00600);国家自然科学基金资助项目(60825403;61176080;61176073)

摘　　要：随着微电子技术节点不断向前推进,非挥发性存储器(NVM)的容量迅速增大,对读取速度的要求也日益提高。通常,在大规模快闪存储器中采用页读取模式将多个比特的数据同时读取到缓存中,再从缓存中依次输出数据。这样等效于缩短读取周期,但也会遇到瞬态功耗过大的问题。作为改进措施,提出一种新型电流型灵敏放大器的预充方法,在传统灵敏放大器的基础上,采取多相位预充的方法,分时段对位线进行预充电,将瞬态大电流平均到整个预充周期,从而在保证低功耗的同时加大页读取的容量,提高读取速度。经验证,采用该方法的灵敏放大器具有较快的读取速度、较低的功耗,在3.3V工作电压下,电路的读取时间为7ns。In large capacity memory,page read is often used to improve read speed,in which many bits are read into one buffer in one time and then processed consecutively from there.Although it speeds up the read process,it has a high transient current.A new multi-phase precharge method for current-mode sensing amplifier was proposed to reduce transient current.Simulation results showed that,for a same page size,multi-phase precharge reduced power consumption quite a lot,compared to single-phase precharge.It has been demonstrated that sensing amplifiers using the multi-phase precharge method achieved an access time of only 7 ns at 3.3 V operating voltage.

关 键 词：灵敏放大器 非挥发性存储器 页读取 流水线 

分 类 号：TN47[电子电信—微电子学与固体电子学]