湿法和溶脱法的亚微米ZnO:Al光栅制备  

Farbrication of submicron ZnO:Al gratings with wet etching and lift-off technology

作　　者：刘仁臣[1] 吴永刚[1] 夏子奂[1] 王振华[1] 唐平林[1] 梁钊铭[1] 

机构地区：[1]同济大学精密光学工程技术研究所,上海200092

出　　处：《强激光与粒子束》2012年第11期2613-2617,共5页High Power Laser and Particle Beams

基　　金：国家自然科学基金项目(10576021;60977028);上海市重点科研基金项目(09JC1413800)

摘　　要：以激光干涉法得到的光刻胶图案为掩模,采用湿法刻蚀和溶脱-剥离法制备了具有良好减反射特性的亚微米掺铝氧化锌(ZnO:Al,AZO)光栅。表面形貌特征和反射光谱测试结果表明,湿法刻蚀较溶脱-剥离法得到的AZO光栅表面更为粗糙,两者均方根粗糙度分别为25.4,7.6nm。在400～900nm波段,两种方法制备的周期和高度相同的光栅,平均总反射率分别由AZO薄膜的12.5%下降到8.3%和10.2%。两者的平均镜面反射率分别为6.2%和6.6%,平均漫反射率分别为2.1%和3.6%。湿法刻蚀得到的表面较为粗糙AZO光栅的漫反射明显减弱,从而导致总的减反特性优于溶脱-剥离法得到的表面起伏相对较小的AZO光栅。With a photoresist pattern acquired by laser interference lithography as an etch mask, submicron aluminum doped zinc oxide （AZO） gratings, which had excellent anti-reflection properties, were acquired by using wet etching and lift-off technol- ogy. The surface morphology was observed by an atomic force microscopy （AFM）, and the reflectance spectrum was tested with a ultra-visible spectrophotometer. Results show that the AZO grating fabricated by wet etching is rougher than that acquired by lift-off technology, and the root mean squares of surface topographies of the two gratings are 25.4 nm and 7.6 nm, respectively. In the waveband range of 400-900 nm, two structural AZO gratings with the same period （980 nm） and height （160 nm） decrease the average total reflectance from 12.5% of the AZO thin film to 8.3% and 10.20%, respectively. The average specular reflec- tance are 6.2% and 6.6%, and diffuse reflectance are 2.1% and 3.6%, accordingly. It is concluded that wet etching-made AZO grating with rough surfaces decrease diffuse reflectance greatly, and are better in decreasing total reflectance than lift-off-made AZO grating with flatter surfaces.

关 键 词：亚微米光栅 掺铝氧化锌 激光干涉法 湿法刻蚀 溶脱-剥离法 

分 类 号：TN304.21[电子电信—物理电子学]