退火温度对BNST薄膜结构和性能的影响  

Influence of Annealing Temperature on Microstructure and Dielectric Properties of BaO-Nd_2O_3-Sm_2O_3-TiO_2 Thin Films

作　　者：张巧真[1] 张继华[1] 杨传仁[1] 陈宏伟[1] 赵强[1] 

机构地区：[1]电子科技大学薄膜与集成器件国家重点实验室,四川成都610054

出　　处：《压电与声光》2012年第5期742-745,共4页Piezoelectrics & Acoustooptics

基　　金：广东省教育部产学研结合重大专项基金资助项目(2009A090100003)

摘　　要：采用射频磁控溅射法在Pt/Ti/LaAlO3(100)衬底上制备了BaO-Nd2O3-Sm2O3-TiO2系(BNST)薄膜。研究了退火温度对BNST薄膜结构、表面形貌和介电性能的影响。X线衍射仪(XRD)分析表明,随着退火温度的升高,晶粒逐渐长大。经850℃退火处理的BNST薄膜具有很好的结晶质量。原子力显微镜(AFM)分析表明,在一定范围内提高退火温度所制备的薄膜晶粒致密、大小均匀。LCR测试分析表明,在测试频率为100kHz时,随着退火温度的升高,BNST薄膜介电常数有所增加,介电损耗则先降低,后增加。实验表明,经850℃退火处理,所制备的BNST薄膜的介电常数达37,介电损耗小于1.2‰。BaO-Nd2O3-Sm2O3-TiO2（BNST） thin films were prepared by RF magnetron sputtering technique on Pt/Ti/ LaAlO3（100） substrates,then the films were annealed with different annealing temperature in air to improve crystallization.The influence of the annealing temperature on the BNST thin films structure,morphology and dielectric properties was studied by XRD,AFM and LCR.The results showed that the crystalline degree,the grain size and the dielectric constant increase with the rise of annealing temperature.The minimum dielectric loss and surface roughness was achieved at 850 ℃.The dielectric constant reached to 37,and the dielectric dissipation was less than 1.2‰ at frequency of 100 kHz.

关 键 词：BaO-Nd2O3-Sm2O3-TiO2(BNST)薄膜 射频磁控溅射 退火温度 薄膜结构 介电性能 

分 类 号：TM22[一般工业技术—材料科学与工程]