Development and Prospect of SiC Power Devices in Power Grid  

作　　者：SHENG Kuang GUO Qing ZHANG Junming QIAN Zhaoming 

机构地区：[1]Zhejiang University

出　　处：《中国电机工程学报》2012年第30期I0001-I0001,3,共1页Proceedings of the CSEE

基　　金：国家863高技术基金项目（2011AA050401）

摘　　要：碳化硅作为一种宽禁带材料,具有高击穿场强、高饱和电子漂移速率、高热导率等优点,可以实现高压、大功率、高频、高温应用的新型功率半导体器件。该文对碳化硅功率半导体器件的最新发展进行回顾,包括碳化硅功率二极管、MOSFET、IGBT和晶闸管,对其在电力系统的应用现状与前景进行展望。高压大容量碳化硅功率半导体器件的迅速发展,将对电力系统的发展带来深远的影响。Global demand for high-efficiency green energy technologies and products has posed new challenges to electrical grid, and therefore, efficient exploitation of renewable energy resources is of great significance. Ultra high voltage （UHV） power devices with low energy losses and high-frequency ratings are necessary for power grid applications with reduced system size, weight, and volume. All utility-scale power electronics systems in use today rely on silicon-based semiconductor switches to perform their functions, and the thyristors,

关 键 词：功率器件 电网 SiC 电力电子系统 可再生能源资源 展望 半导体开关 能源技术 

分 类 号：TN303[电子电信—物理电子学] TM727[电气工程—电力系统及自动化]