电阻阵列红外景物产生器微桥结构的研制及仿真  

Fabrication and Analysis of Micro-bridge Structure for Resistor Array Infrared Scene Projector

作　　者：周顺[1] 刘卫国[1] 蔡长龙[1] 刘欢[1] 秦文罡[1] 

机构地区：[1]西安工业大学光电工程学院,西安710032

出　　处：《西安工业大学学报》2012年第8期613-616,共4页Journal of Xi’an Technological University

基　　金：陕西省教育厅专项科研计划项目(2010JK590);陕西省重点实验室开放基金项目(ZSKJ200904);西安工业大学"薄膜技术与光学检测"科研创新团队建设计划资助

摘　　要：为了进一步提高电阻阵列红外景物产生器的性能,设计并制作了该器件的微桥结构.利用SiOx与TiWN分别作为微桥结构的介电材料与电阻材料;利用表面工艺技术制作160×120阵列微桥结构;并对微桥结构进行了热学性能的仿真分析.研究结果表明:所设计的工艺流程可行,成功制作了微桥结构阵列;制作的微桥桥面具有良好的温度分布均匀性;在相同电功率下,采用低热导率的SiOx薄膜取代SiNx薄膜能够显著提高桥面温度.In order to further improve the performance of the resistor array infrared scene projector, the micro-bridge structure was designed and fabricated. The dielectric material of SiOx and resistance material of TiWN were applied in the micro-bridge. Two-level 160 × 120 array of micro-bridge was fabricated by using surface micromachining. In addition, the finite element method was used to analyze the thermal properties of micro-bridge. The results show that the design of the process is feasible and the array of micro-bridges was fabricated successfully. The temperature distributing analysis indicates a good uniformity on the surface of micro-bridge. Moreover, the temperature of surface is increased remarkably when the SiNx film in the micro- bridge is replaced with SiOx films of low thermal conductivity.

关 键 词：红外景物产生器 微桥 微加工技术 SIOX TiWN 

分 类 号：TN215[电子电信—物理电子学]