磁流变-化学机械复合抛光装置设计  

Design on a Chemo-Mechanical Magneto-Rheological Finishing Apparatus

作　　者：祝江停[1] 阎秋生[1] 高伟强[1] 

机构地区：[1]广东工业大学机电工程学院,广东广州510006

出　　处：《机电工程技术》2012年第10期84-87,共4页Mechanical & Electrical Engineering Technology

基　　金：国家自然科学基金项目(编号:50875050和U1034006);广东省自然科学基金重点项目(编号:9251009001000009)

摘　　要：针对SiC晶片外延膜生长需达到原子级超光滑表面的要求以及加工效率低、表面精度差的问题,提出了一套磁流变-化学机械精密抛光装置,该装置利用软件平台对抛光盘和工件运动精确控制,并具有温度、转速等参数微调及显示功能。对装置的工作原理、结构进行了介绍,并在该装置上进行了工艺试验,取得较高的加工效率和光滑无损伤的加工表面。The growth of epitaxial layer of SiC wafer requires the surface of SiC substrate to reach atomic scale accuracy. To solve this problem, the paper proposes a new precisive polishing apparatus based on Chemo-mechanical Magneto-theological Finishing（CMMRF） , which can make precise control the movement of polishing disc and workpiece with software platform, also the apparatus has equipped with micro adjustment and display function module to rotation speed and temperature. The working principle and structure of this new polishing apparatus is introduced, and some experiments have been carried out and high material removal rate and smooth, uniform, zero-defect surface were obtained.

关 键 词：化学机械抛光 磁流变抛光 复合抛光 

分 类 号：TG580.6[金属学及工艺—金属切削加工及机床]