Preparation and thermoelectric properties of p-type Bi_(0.52)Sb_(1.48)Te_3 + 3% Te thin films  

作　　者：ZHANG JianSheng YANG JunYou FENG ShuangLong LIU ZhengLai PENG JiangYing 

机构地区：[1]State Key Laboratory of Material Processing and Die&Mould Technology,Huazhong University of Science and Technology,Wuhan 430074,China

出　　处：《Chinese Science Bulletin》2012年第32期4220-4224,共5页

基　　金：supported by the National Natural Science Foundation of China (50827204 and 51072062);the Specialized Research Fund for the Doctoral Program of Higher Education of China (20100142110016);the Fundamental Research Funds for the Central Universities (HUST,2010ZD014)

摘　　要：Thin films of p-type Bi0.52Sb1.48Te3 + 3% Te were deposited on glass substrates by flash evaporation.X-ray diffraction and field-emission scanning electron microscopy were performed to characterize the thin films,and the effects of preparation and annealing parameters on the thermoelectric properties were investigated.It was shown that the power factors of the films increased with increasing deposition temperature.Annealing the as-deposited films improved the power factors when the annealing time was less than 90 min and the annealing temperature was lower than 250℃.A maximum power factor of 10.66 μW cm-1 K-2 was obtained when the film was deposited at 200℃ and annealed at 250℃ for 60 min.Thin films of p-type Bi0.52Sb1.48Te3 ＋ 3 % Te were deposited on glass substrates by flash evaporation, X-ray diffraction and field-emission scanning electron microscopy were performed to characterize the thin films, and the effects of preparation and annealing parameters on the thermoelectric properties were investigated. It was shown that the power factors of the films increased with increasing deposition temperature. Annealing the as-deposited films improved the power factors when the annealing time was less than 90 min and the annealing temperature was lower than 250℃. A maximum power factor of 10.66 μW cm-1 K-2 was obtained when the film was deposited at 200℃ and annealed at 250℃ for 60 min.

关 键 词：薄膜 热电特性 p型 制备 扫描电子显微镜 沉积温度 X-射线衍射 退火时间 

分 类 号：TN304.055[电子电信—物理电子学]