纳米金属氧化物半导体场效应晶体管(NANO-MOSFET)的热电子发射和弹道输运模型  

The Thermionic-emitting and Ballistic Transport Model for Nanoscale Metal oxide semiconductor Field Effect Transistor (NANO MOSFET)

作　　者：郭靖[1] 蒋建飞[1] 蔡琪玉[1] 

机构地区：[1]上海交通大学微电子研究所,上海200030

出　　处：《电子学报》2000年第8期52-54,共3页Acta Electronica Sinica

基　　金：国家自然科学基金重大项目! (No .69890 2 4 4 );国家自然科学基金!(No.69671 0 0 5);上海市AM基金

摘　　要：本文首先给出了SOI上纳米金属 氧化物 半导体场效应晶体管 (NANO MOSFET)的结构 ,它是一种非传统MOSFET .NANO MOSFET源漏区采用金属 ,沟道采用本征硅 ,该结构避免了传统MOSFET的短沟道效应 .利用一组基本器件方程式 ,我们模拟并分析了NANO MOSFET的基本特性 .计算表明 ,NANO MOSFET在一定范围内源漏电导受栅极电压显著调控 ,适用于各种数字电路 ,包括存储单元 .另外 ,选取合适的直流偏置点 ,NANOThe structure of nanoscale metal oxide semiconductor field effect transistor (NANO MOSFET) is introduced.Its source and drain regions are made of metal and the channel is made of intrinsic silicon.Such structure can effectively avoid short channel effects.Through solving a set of device equations,we simulate and then analyze the basic characteristics of NANO MOSFET.The results show that the source drain conductance of NANO MOSFET changes dramatically when the gate voltage changes.The characteristics is desirable for digital applications,including memory cells.Simulation results also show that NANO MOSFET can be applied as small signal analog amplifier if properly biased.

关 键 词：纳米器件 半导体场效应晶体管 热电子发射 

分 类 号：TN386[电子电信—物理电子学]