GaAs MESFET栅极漏电流退化机理分析  

Mechanism Analysis of Gate Leakage Current Degradation of GaAs MESFETs

作　　者：费庆宇[1] 黄云[1] 

机构地区：[1]信息产业部电子第五研究所,广东广州510610

出　　处：《电子产品可靠性与环境试验》2000年第4期8-11,共4页Electronic Product Reliability and Environmental Testing

摘　　要：高温存储试验后某种ＧａＡｓ　ＭＥＳＦＥＴ的栅－漏极正向和反向漏电流增大。为分析失效机理，测定了试验前后栅－漏极低压正向电流随温度的变化，定性估计了试验前后复合－产生中心浓度的变化，确定肖特基势垒接触有源层的复合－产生中心浓度增加是两种漏电流增大的原因，为高温下ＧａＡｓ　ＭＥＳＦＥＴ的肖特基势垒接触存在栅金属下沉和扩散提供了证据。Forward and Reverse Gate-Grain Leakage Current of GaAs MESFETs increase after High Temperature Storage Test (HTST) .In order to study the failure mechanisms an experiment to measure the low-biased forward current of Gate-Grain diode as a function of temperature has been carried out.The change of density of Combination-Generation Centers(C-G C)after HTST has been estimated qualitatively. The increase of the both leakage currents is due to the increase of C-G C in the active layer under the gate An evidence of gate metal sinking and metal-semiconducion after HTST has been obtained.

关 键 词：漏电流 砷化镓 MESFET 栅极 

分 类 号：TN386.3[电子电信—物理电子学]