2.4μm GaInAsSb红外探测器台面腐蚀研究  

The Investigation of Mesa Etching for 2 .4μm GaInAsSb Infrared detectors

作　　者：梁帮立[1] 夏冠群[2] 富小妹 程宗权 

机构地区：[1]苏州大学物理系,苏州215006 [2]中国科学院上海冶金研究所固体元器件与系统研究室,上海200050

出　　处：《微电子技术》2000年第4期24-27,共4页Microelectronic Technology

基　　金：国家863高技术研究发展计划!课题代号863-715-0152

摘　　要：本文提出了适于２．μｍ　ＧａＩｎｓＳｂ台面结构探测器制备的ＨＦ／Ｈ２Ｏ２／ Ｃ４Ｈ６Ｏ６／Ｈ２Ｏ腐蚀液体系，并确定了合适的成分配比。实验结果表明，该腐蚀液 体系对ＧａＩｎＡｓＳｂ材料腐蚀速度适中、侧向腐蚀小、不破坏光刻胶保护、腐蚀面 平整、腐蚀槽齐整、受外延付表面质量影响较小。The mesa etching of 2 .4μm GaInAsSb infrared detectors has been investigated in this present work, a etchant consisting of hydrofluoric acid, hydroge peroxide, tartic acid and water for the chemical etching GaInAsSb/GaSb materials has been proposed and a suit- able ratio of this etchant for fabricating 2.4μm GaInAsSb infrared detectors has been deter- mined by experiment results. This will be better the surface passivation of GaInAsSb in- frared detectors.

关 键 词：GAINASSB 红外探测器 台面腐蚀 

分 类 号：TN215[电子电信—物理电子学]