PECVD制备纳米晶多晶硅薄膜  

Preparation of nano-grain ploy-silicon thin films by PECVD

作　　者：张丽民[1] 刘淑凤[1] 夏雯[1] 李冀东[1] 

机构地区：[1]北京有色金属研究总院国家有色金属及电子材料分析测试中心,北京100088

出　　处：《半导体光电》2012年第5期680-682,共3页Semiconductor Optoelectronics

基　　金：科技部创新方法专项项目(2010IM031300)

摘　　要：以Si(100)为衬底,采用磁控溅射和射频等离子体增强化学气相沉积系统制备了Si(100)/Al膜/非晶Si膜结构的样品。对该样品进行Al诱导真空退火以制备多晶硅薄膜,采用X射线衍射仪(XRD)和AFM分析薄膜微结构及表面形貌。实验结果表明,在经过500℃、550℃Al诱导退火后,形成了择优取向为〈111〉晶向的多晶硅薄膜。AFM给出了550℃退火后薄膜表面形貌,为100～200nm大小的圆丘状硅晶粒,密集排列在薄膜表面;并对Al诱导真空退火晶化的机理进行了分析。By adopting magnetron sputtering and radio frequency plasma enhanced chemical vapor deposition system（RF-PECVD）,Si（100）/Al film/amorphous Si film samples were deposited on p-type 〈100〉 single silicon.The aluminum-induced crystallization（AIC） vacuum annealing was adopted to prepare polycrystalline silicon thin films.The microstructure and the surface appearance were analyzed by X-ray diffraction instrument（XRD） and AFM.The results indicate that the 〈111〉 polycrystalline silicon thin films of selective better direction are formed after 500 ℃ and 550 ℃ aluminum-induced crystallization vacuum annealing.The AFM shows that the surface of the thin films presents slender crystalline grains with the size of 100~200 nm after 550 ℃ vacuum annealing,and the mechanism of crystallization is analyzed.

关 键 词：PECVD 非晶硅 Al诱导晶化真空退火 机理 

分 类 号：TN304.055[电子电信—物理电子学]