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作 者:徐志洁[1] 柳峰[1] 高印博[1] 赵美星[1] 孙乃坤[1]
出 处:《半导体光电》2012年第5期686-689,共4页Semiconductor Optoelectronics
基 金:沈阳理工大学博士启动专项基金项目(沈理工科[2008]20号)
摘 要:采用高能球磨法及脉冲激光沉积法(PLD)分别制备了不同浓度的Ho3+∶Al2O3纳米粉体及薄膜,利用X射线衍射仪(XRD)、分光光度计、荧光光谱仪等分析手段研究了Ho3+离子掺杂对Al2O3结构及发光性能的影响。XRD图谱显示粉体样品为六方α-Al2O3结构,薄膜样品为体立方γ-Al2O3结构。1wt%Ho3+掺杂的Al2O3纳米粉体在454nm、540nm附近出现由Ho3+离子能级跃迁引起的吸收峰。采用579nm的激发光源对样品进行荧光光谱检测,发现两种样品在466~492nm波段均出现F+心所引起的缺陷发光峰,且发光峰的强度随Ho3+浓度的增加而增强。Ho3+∶Al2O3 nano-powders and Ho3+∶Al2O3 thin films were prepared by high-energy ball milling and pulsed laser deposition(PLD) repectively.The structure and optical properties were investigated by means of X-ray diffractometer(XRD),spectrophotometer,fluorescence spectrometer.The XRD patterns show the hexagonal α-Al2O3 structure of nano-powders and the cubic γ-Al2O3 structure of films.The absorption spectra of 1wt% Ho3+∶Al2O3 nano-powder show new absorption peaks at 454 nm and 540 nm caused by the level transition of Ho3+ ions.Using the excitation source with a wavelength of 579 nm,the photoluminescence(PL) spectra of all the samples show an emission band between 466 nm and 492 nm,which is ascribed to the absorption of F+ color center,and upon increasing Ho3+ incorporation,the intensity of those peaks are accordingly enhanced.
关 键 词:Ho3+ AL2O3 球磨 脉冲激光沉积 结构 发光性能
分 类 号:TN244[电子电信—物理电子学]
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