多晶硅表面暗纹的形成以及消除技术研究  

Eliminating Deep Ditches on Textured Multi-crystalline Silicon Surfaces

作　　者：徐华天[1] 冯仕猛[1] 单以洪[1] 田嘉彤[1] 周玲[2] 杨树泉[2] 雷刚[3] 鞠雪梅[3] 

机构地区：[1]上海交通大学物理系,上海200240 [2]上海航天技术研究院,上海201109 [3]上海航天技术研究院811所,上海201109

出　　处：《半导体光电》2012年第5期690-693,714,共5页Semiconductor Optoelectronics

基　　金：上海航天基金项目(11GFZ-JJ08-030)

摘　　要：通过改变氢氟酸和硝酸的比列,进行了多晶硅表面腐蚀实验,实验研究发现不同配比酸液能刻蚀形貌不同的陷阱坑,消除深沟槽,但陷阱坑开口大,反射率比较高;在优化氢氟酸和硝酸配比的基础上加入阴离子活性剂,然后腐蚀多晶硅表面。实验样品的SEM显示,多晶硅表面能形成比较均匀开口小的陷阱坑,其表面反射率也比较低,而且能有效消除长而深的腐蚀沟槽,这对多晶硅太阳电池的研究具有一定的意义。Multi-crystalline silicon surface texturing is a generally used technology in mc-Si solar cells production.However Si surfaces textured in traditional HF/HNO3/H2O solution are always filled with long deep ditches which will decrease the conversion efficiency by increasing leakage current.In this paper,the ratio of HF and HNO3 is adjusted to avoid the appearance of the ditches at the cost of reducing antireflection effect,then a kind of anionic surfactant applied into solution to improve surface topography.The experimental results show that the final textured surfaces can achieve low reflection without long deep ditches,which is very ideal for mc-Si solar cells.

关 键 词：多晶硅 绒面技术 陷光效应 反射率 暗纹 

分 类 号：TM914.4[电气工程—电力电子与电力传动]