CVD制备3C-SiC及其应用于MEMS的研究进展  

Research Progress of 3C-SiC: Preparation by CVD and Application in MEMS

作　　者：严春雷[1] 刘荣军[1] 曹英斌[1] 张长瑞[1] 张德坷[1] 

机构地区：[1]国防科学技术大学航天与材料工程学院新型陶瓷纤维及其复合材料国防科技重点实验室,长沙410073

出　　处：《材料导报》2012年第21期13-16,29,共5页Materials Reports

基　　金：国家自然科学基金(51102282)

摘　　要：高温、强振、强腐蚀、高湿等恶劣环境中的监测和控制系统对MEMS(Microelectromechanical systems)提出了新的挑战。SiC具有化学惰性,高热导率及优良的力学、电学、高温性能,在MEMS技术中备受青睐,成为Si-MEMS体系极具竞争力的替代材料。综述了关于立方相碳化硅(3C-SiC)薄膜的化学气相沉积(CVD)制备方法,介绍了其力学、电学性能的最新研究进展,最后举例说明了3C-SiC薄膜在MEMS器件中应用的研究现状。The monitoring and control systems applied in severe environments, e.g. high temperature, intense shock/vibration, erosive flow, corrosive media, and high moisture, have put forward many challenges for MEMS technology. Silicon carbide （SIC） is a material with very attractive properties for MEMS used in hash environments. Its exceptional properties such as chemical inertness, high thermal conductivity, favorable electrical properties, me- chanical strength, and ability to operate at high temperature make it a competitive alternative to S^based MEMS. A review on the progress of 3C-SiC film involving CVD preparation method, investigations of mechanical and electrical properties is presented. Finally, current status of research on 3C-SiC MEMS devices is introduced and a few examples are given.

关 键 词：立方相碳化硅薄膜 化学气相沉积 力学性能 电学性能 MEMS器件 

分 类 号：TM23[一般工业技术—材料科学与工程]