Analysis of temperature-dependent characteristics of a 4H-SiC metal-semiconductor-metal ultraviolet photodetector  

作　　者：CHEN Bin YANG YinTang XIE XuanRong WANG Ning MA ZhenYang SONG Kun ZHANG XianJun 

机构地区：[1]Key Laboratory of Ministy of Education for Wide Band-Gap Semiconductor Materials and Devices,School of Microelectronics,Xidian University,Xi'an 710071,China [2]Xi'an Electronic Engineering Research Institute,Xi'an 710100,China [3]No.771 Institute of Microelectronics Technology,Xi'an 710054,China

出　　处：《Chinese Science Bulletin》2012年第34期4427-4433,共7页

基　　金：supported by the National Defense Pre-Research Foundation of China (51323040118, 513080302)

摘　　要：We investigate the temperature dependence of current-voltage and spectral response characteristics of a 4H-SiC metal-semicon-ductor-metal (MSM) ultraviolet photodetector in the temperature range from room temperature to 800 K with two-dimensional (2D) numerical simulator ISE-DESSIS. It is found that the dark current and photocurrent increase with the increasing temperature. For the range of 500-800 K, the dark current increases by nearly a factor 3.5 every 150 K larger than that of photocurrent, leading to a negative effect on photodetector current ratio (PDCR). Nevertheless, the PDCR is still greater than 200 even at 800 K, which exhibits the excellent thermal stability. In addition, the responsivity has an unsymmetrical trend. As temperature rises, it is clear that a remarkable red-shift of 12 nm occurs and overall responsivity is enhanced for longer wavelength. While the short-wave-length response remains relatively independent of temperature. The mechanism of indirect and direct band absorption transition is responsible for temperature-dependent spectrum distribution. These findings provide a significant insight on the design of the MSM detector operated at elevated temperature.We investigate the temperature dependence of current-voltage and spectral response characteristics of a 4H-SiC metal-semicon- ductor-metal （MSM） ultraviolet photodetector in the temperature range from room temperature to 800 K with two-dimensional （2D） numerical simulator ISE-DESSIS. It is found that the dark current and photocurrent increase with the increasing temperature. For the range of 500-800 K, the dark current increases by nearly a factor 3.5 every 150 K larger than that of photocurrent, leading to a negative effect on photodetector current ratio （PDCR）. Nevertheless, the PDCR is still greater than 200 even at 800 K, which exhibits the excellent thermal stability. In addition, the responsivity has an unsymmetrical trend. As temperature rises, it is clear that a remarkable red-shift of 12 nm occurs and overall responsivity is enhanced for longer wavelength. While the short-wave- length response remains relatively independent of temperature. The mechanism of indirect and direct band absorption transition is responsible for temperature-dependent spectrum distribution. These findings provide a significant insight on the design of the MSM detector operated at elevated temperature.

关 键 词：温度依赖性 4H-SIC 光谱响应特性 光检测器 半导体 金属 紫外线 数值模拟器 

分 类 号：TN23[电子电信—物理电子学]