RF MEMS开关的设计分析  

Design and Analysis of RF MEMS Switches

作　　者：石国超[1] 纪学军[1] 

机构地区：[1]中国电子科技集团公司电子第五十四研究所,河北石家庄050081

出　　处：《无线电工程》2012年第11期40-43,共4页Radio Engineering

摘　　要：针对具有低损耗、高隔离度性能的微机电系统(Micro-Electro-Mechanical System,MEMS)开关,介绍了串联DC式和并联电容式的开关结构模型,并对并联电容式MEMS开关的工作原理、等效电路模型和制造工艺流程进行了描述,利用其模型研究了开关的微波传输性能,设计了一款电容耦合式开关并进行了仿真。由仿真结果可得,开关"开态"时的插入损耗在40 GHz以内优于-0.3 dB;开关"关态"时的隔离度在20～40 GHz相对较宽的频带内优于-20 dB。With respect to MEMS switches with low insertion loss and high isolation,the structures of cantilever MEMS switches and capacitive MEMS switches are introduced,and the operation principle,equivalent circuit model and manufacturing process of a shunt capacitive RF MEMS switch are described.Simulation result shows that when the switch is in ＂ON＂ state,the insertion loss is less than-0.3 dB within 40 GHz;and when the switch is in ＂OFF＂ state,an isolation of more than-20 dB can be achieved within 20~40 GHz.

关 键 词：射频微机电系统 开关 隔离度 插入损耗 

分 类 号：TN743[电子电信—电路与系统]