a-Si(n)/c-Si(p)异质结电池非晶层的模拟优化  

Simulation and Optimization of a-Si (n)/c-Si (p) Amorphous Layer of Hetero-junction Battery

作　　者：吴国盛[1] 王振文[1] 闻腾[1] 刘淑平[1] 

机构地区：[1]太原科技大学,山西太原030024

出　　处：《科技创新与生产力》2012年第10期87-90,共4页Sci-tech Innovation and Productivity

基　　金：太原科技大学研究生科技创新项目(20111027)

摘　　要：采用afors-het数值模拟软件,针对a-Si(n)/a-Si(i)/c-Si(p)电池结构的非晶层主要参数,模拟研究并讨论了异质结电池的发射层厚度、发射层掺杂浓度、界面态和本征非晶层。提出了如下结论:发射层厚度主要影响短波光子吸收;随着厚度的增加,电池性能均下降;发射层重掺杂是获得好的转化效率的一个条件;界面态较低时对电池性能影响不大,当达到1014cm-2·eV-1时,电池性能很差;高质量的本征非晶层可以有效钝化硅片,降低界面态密度,提高电池性能,但应控制一定厚度内。Afors-het numerical simulation software,for a-Si（n） / a-Si（i） / c-Si（p） battery structure of the main parameters of the amorphous layer,the analog of the emission layer of the hetero junction cells was studied and discussed.Doping concentration,the interface state,the intrinsic amorphous layer thickness and an emission layer made the following conclusions： the thickness of the emission layer is principally affected shortwave photon absorption;decreased with increasing thickness,the battery performance;emission layer heavily doped with a condition to obtain good conversion efficiency;low interface state of the battery performance when the 1014cm-2·eV-1,the battery performance is poor;high quality of the intrinsic amorphous layer can be effectively passivated silicon,to reduce the interface state density,and to improve battery performance,but should be controlled within a certain thickness.

关 键 词：afors-het 异质结电池 发射层 界面态 本征层 

分 类 号：O475[理学—半导体物理]