CMOS宽带低噪声放大器的设计  

Design of Low Noise Amplifier in Wide-Band CMOS

作　　者：林丽芬[1,2] 凌朝东[1,2] 杨骁[1,2] 

机构地区：[1]华侨大学信息科学与工程学院,福建361021 [2]厦门市专用集成电路系统重点实验室,福建厦门361008

出　　处：《华侨大学学报（自然科学版）》2012年第6期640-643,共4页Journal of Huaqiao University(Natural Science)

基　　金：国家自然科学基金资助项目(60772164);福建省科技计划项目(2011H6018)

摘　　要：提出一种利用噪声抵消技术减小热噪声因子的互补金属氧化物半导体(CMOS)宽带低噪声放大器电路.它具有不平衡变换器可转换单端信号为差分信号,无需外接平衡-不平衡变换器,也未采用电感匹配技术,进一步减小了芯片的面积.该低噪声放大器基于TSMC 0.18μm RF CMOS 1.8V的工艺设计,仿真和验证采用Cadence公司的Spectre工具.结果表明:在150～600MHz频带内的噪声系数为3.9dB,输入匹配参数S11小于-11.7dB,输入3阶截点IIP3为1.03dBm.In this paper,a wide-band complementary metal oxide semiconductor（CMOS） with low noise amplifier is presented,in which the noise-canceling technique is exploited to reduce the thermal noise of input transistor.The LNA combining with active balun can convert the single-ended signal into differential signals,so off-chip balun is not needed.Furthermore,the LNA is inductor-less,which can reduce chip area.The LNA is designed in TSMC 0.18 μm RF CMOS process with 1.8 V supply voltage,simulated and verified by using the Spectre tools of Candence.The simulation results show that the noise figure is less than 3.9 dB,the input match is less than-11.7 dB rang from 150 MHz to 600 MHz and IIP3 is 1.03 dBm.

关 键 词：低噪声放大器 宽带 噪声抵消技术 不平衡变换器 互补金属氧化物半导体 

分 类 号：TN492[电子电信—微电子学与固体电子学]