在喷动流化床中用SiHCl_3制聚颗粒硅的动力学研究  

Kinedic study of St-particles prepration from SiHCl_3, in spouted-fludized-bed

作　　者：王樟茂[1] 吴兴松 赵炳辉[2] 阙端麟[2] 

机构地区：[1]浙江大学化学工程学系,浙江杭州310027 [2]浙江大学硅材料国家重点实验室,浙江杭州310027

出　　处：《浙江大学学报（自然科学版）》2000年第3期233-238,共6页

基　　金：国家科委高技术基础处资助;浙江大学硅材料国家重点实验室开放课题

摘　　要：在一直径为 ８０ ｍｍ的喷动流化床反应装置系统中进行了三氯氢硅的氢还原反应实验．研究了 颗粒硅的生长速率与颗粒硅的初始粒径和三氯氢硅分压的关系，建立了颗粒硅的生长速率模型，并用实 验数据进行关联，得到如下的半经验、半理论模型，该模型能较好地与实验数据相吻合，实验结果证明了 用流态化技术进行颗粒硅生产的可行性．与西门子工艺相比，流化床工艺可以提高原料气的转化率，降 低能耗和氢配比．因而多晶硅的流态化技术研究有着很好的发展前景。A new type of reactor,which is a spouted-fluidized-bed with 80mm diameter,was used to produce polycrystalline silicon from the hydrogen reduction of trichlorosilane. Experiments were carried out to study the effect of the partial pressure of trichlorosilane,the initial diameters of the silicon seeds on the growth rate of the seeds. The results expressed that growth rate of silicon is directly proportional to the partial pressure of trichlorosilane and the diameters of the silicon seeds. A model was developed to treat the Chemical Vapor Deposition on the seeds. Based on the experimental results,the model parameters were obtained. The growth rates of the size of silicon seeds calculated from this model agree with actual size measurements.

关 键 词：三氯氢硅 氢还原反应 喷动流化床 颗粒硅 多晶硅 

分 类 号：TN304.12[电子电信—物理电子学] TQ127.2[化学工程—无机化工]