磁控溅射制备ZnO:Eu薄膜发光性能研究  

Fabrication of Eu-doped ZnO thin films by magnetron sputtering and photoluminescence properties

作　　者：赵立萍[1,2] 孙文军[1] 孙京南 李孟洋[1] 李娟[1] 支洪武[1] 

机构地区：[1]哈尔滨师范大学物理与电子工程学院黑龙江省先进功能材料与激发态重点实验室,黑龙江哈尔滨150025 [2]牡丹江师范学院物理系,黑龙江牡丹江157012

出　　处：《真空》2012年第6期32-34,共3页Vacuum

基　　金：黑龙江省青年基金(批准号:QC06C043);哈尔滨市青年基金(批准号:2006RFQXG055);黑龙江省教育厅骨干教师项目(批准号:1251G031);哈师大预研项目(批准号:08XYS-01);牡丹江师范学院科研项目(批准号:QY201105)

摘　　要：采用射频磁控溅射法在蓝宝石基片上制备ZnO:Eu薄膜,通过X射线衍射仪和荧光分光光度计等测试其晶体结构和发光特性,分析退火对薄膜晶体结构和发光特性的影响。结果表明,ZnO:Eu薄膜为C轴择优生长的多晶薄膜,实现ZnO基质中掺杂Eu3+;退火样品结晶质量较好,有助于ZnO:Eu薄膜中Eu3+的5D0-7F2的能级跃迁发光;高于ZnO带隙的高能激发(间接激发)和Eu3+的7F0-5L6和7F3-5D2能级间的低能共振激发(直接激发)都能观察到Eu3+的5D0-7F2能级跃迁的特征发光(618nm);间接激发时存在ZnO基质与Eu3+之间发生能量传递。The ZnO： Eu films grown by radio frequency （RF） magnetron sputtering on sapphire substrates were investigated. The lattice structure and photolumineseence （PL） properties of the ZnO：Eu films were ＇characterized by X-ray diffractometer and spectrometer,respectively. Influence of annealing on the lattice structure and PL properties of the ZnO：Eu films were analyzed. The results reveal that the ZnO：Eu films are polycrystalline with a C-axis oriented wurtzite structure. Annealing is beneficial to improve the crystallization quality and the intra-4f shell transition of 5D0-7F2 in Eu3＋. In PL measurements under the high-energy excitation above the band-gap energy of ZnO （indirect-excitation） and under the low-energy excitation resonant to the energy levels of 7F0-SL6 and 7F3-SD2 transitions （direct-excitation） , the annealed samples showed the red-emission lines （618nm） due to the intra-4f shell transition of 5D0-7F： in Eu3＋. There is energy transfer from ZnO to Eu3＋ under the indirect-excitation.

关 键 词：ZNO EU 光致发光 磁控溅射 

分 类 号：O482.31[理学—固体物理] O484.1[理学—物理]