铜铟镓硒太阳能电池多层膜的结构分析  

Structural analysis of Cu(In(1-x)Ga_x)Se_2 multi-layer thin film solar cells

作　　者：潘惠平[1,2] 薄连坤[1] 黄太武[1] 张毅[3] 于涛[3] 姚淑德[1] 

机构地区：[1]北京大学核物理与核技术国家重点实验室,北京100871 [2]黔南民族师范学院物理与电子科学系,都匀558000 [3]南开大学光电子薄膜器件与技术研究所,天津300071

出　　处：《物理学报》2012年第22期529-536,共8页Acta Physica Sinica

基　　金：国家自然科学基金(批准号:10875004);国家重点基础研究发展计划(批准号:2010CB832904)资助的课题~~

摘　　要：对于溅射后硒化和共蒸发等方法制备的铜铟镓硒(CIGS)太阳能电池薄膜,利用多种分析方法研究了CIGS多层膜的复杂结构等.研究表明:卢瑟福背散射(RBS)在分析CIGS多层膜方面具有其独特优势和可靠的结果;溅射后硒化方法制备的CIGS薄膜中,Ga和In在CIGS薄膜中呈梯度分布,这种Ga表层少而内层多的不均匀分布与Mo层没有必然关系;RBS和俄歇电子能谱分析(AES)均显示CIGS太阳能电池器件多层膜界面处存在扩散,尤其是CdS与CIGS,Mo与CIGS的界面处;X射线荧光(XRF)结果表明,电池效率最高的CIGS层中In,Ga比例为In:Ga=0.7:0.3;X射线衍射(XRD)结果显示:退火后的CIGS/Mo薄膜结晶品质得到了优化.In this paper, the complex structure of CulnGaSe （CIGS）, which is fabricated by a two-step progress （the deposition step and the salinization） or co-evaporation method, is analyzed in detail by several methods. Rutherford backscattering spectroscopy （RBS） shows unique advantage for investigating CIGS multi-layer. For the two-step CIGS thin films, both Ga and In atoms reveal a gradient distribution. Such a distribution that Ga atoms are more likely to be localized in a deeper layer of surface than in a shallow layer of surface, has no relation with the Mo layer. RBS and Auger electron spectroscopy （AES） prove that there appears diffusion in the interfaces of multi-layers, especially the interfaces of CdS and CIGS, Mo and CIGS. X-ray fluorescence （XRF） indicates that CIGS thin film presents the highest efficiency when the content ratio of In and Ga atoms is 0.7：0.3. Structural investigation by X-ray diffraction reveals the improved crystalline quality after annealing.

关 键 词：铜铟镓硒太阳能电池 卢瑟福背散射 X射线荧光分析 扩散 

分 类 号：TM914.4[电气工程—电力电子与电力传动]