质子注入等平面GaAs梁式引线混频管  

Proton-Implanted Isopianar GaAs Beam Lead Mixer Diode

作　　者：戴沛然[1] 

机构地区：[1]南京电子器件研究所

出　　处：《固体电子学研究与进展》1990年第4期353-357,共5页Research & Progress of SSE

摘　　要：本文论述质子注入等平面GaAs梁式引线混频管的特点、器件结构及工艺途径.根据理论分析及实验,采用厚度合适的选镀金层作为掩蔽膜,选定合适能量及剂量的多能量叠加质子注入条件,得到较为满意的实验结果,制成的样管在8mm波段测得的变频损耗Lc=5～5.5dB.This paper describes features and structure of the proton-implanted iso-planar GaAs beam lead miser diode and briefly introduces its processing. Using the selective plating gold film with proper thickness as a mask and employing multiple proton implantation method with proper energy and dose, the satisfactory diodes are made with the conversion loss Lc of 5-5.5dB in 8mm band

关 键 词：混频管 染式引线 质子注入 GAAS 

分 类 号：TN115[电子电信—物理电子学]