Low temperature soldering alloy using Sn63 Pb37 implantation of silica ceramics and copper solder assisted by ion and deposition  

作　　者：徐睦忠 田修波 巩春志 杨波 杨士勤 

机构地区：[1]State Key Laboratory of Advanced Welding and Joining,Harbin Institute of Technology,Harbin,150001

出　　处：《China Welding》2012年第3期38-43,共6页中国焊接（英文版）

摘　　要：Copper ion implantation and deposition technique was applied as a pretreatment method for low temperature joining of silica ceramic （ SiO2 ） and copper alloy. The effect of copper ion implantation and deposition parameters on the microstructures and mechanical behavior of the soldering joints was investigated by scanning electron microscope （SEM） , X- ray diffraction （ XRD ） and shearing test. The copper implantation depth was about 90 nm with peak concentration of 70% for the SiO2 sample implanted for 90 rain. If copper film was deposited for 4 rain using magnetron sputtering, copper layer with thickness of 150 nm and peak concentration of 80% was obtained. After pretreatment of ion implantation and deposition, SiO2 and copper were joined successfully at low temperature directly using SnPb solder. The SnPb solder filling ratio along joining seams was up to 100% without defects with smooth soldering toes. With the increase of implantation dose, the shear strength of the Si02/Cu joints increases accordingly. After a special pretreatment on SiO2 （ Cu implantation for 30min, following Cu deposition for 4 rain, then Cu implantation for 60 rain and finally Cu deposition for 120 min） , a maximum soldering strength of 22 MPa was achieved, and the soldering joints fractured at the SiO2 base material.Copper ion implantation and deposition technique was applied as a pretreatment method for low temperature joining of silica ceramic （ SiO2 ） and copper alloy. The effect of copper ion implantation and deposition parameters on the microstructures and mechanical behavior of the soldering joints was investigated by scanning electron microscope （SEM） , X- ray diffraction （ XRD ） and shearing test. The copper implantation depth was about 90 nm with peak concentration of 70% for the SiO2 sample implanted for 90 rain. If copper film was deposited for 4 rain using magnetron sputtering, copper layer with thickness of 150 nm and peak concentration of 80% was obtained. After pretreatment of ion implantation and deposition, SiO2 and copper were joined successfully at low temperature directly using SnPb solder. The SnPb solder filling ratio along joining seams was up to 100% without defects with smooth soldering toes. With the increase of implantation dose, the shear strength of the Si02/Cu joints increases accordingly. After a special pretreatment on SiO2 （ Cu implantation for 30min, following Cu deposition for 4 rain, then Cu implantation for 60 rain and finally Cu deposition for 120 min） , a maximum soldering strength of 22 MPa was achieved, and the soldering joints fractured at the SiO2 base material.

关 键 词：ion implantation and deposition SI02 COPPER low temperature SOLDERING 

分 类 号：TG425.1[金属学及工艺—焊接] TB34[一般工业技术—材料科学与工程]