离子束增强沉积法制备Mo_2N和Mo_(2-x)Ti_xN薄膜及其结构与性能研究  

Synthesis of Mo_2N and Mo_(2-x)Ti_xN thin films by ion beam enhanced deposition method and their structure and properties

作　　者：刘邦治[1] 李国卿[1] 牟宗信[1] 张家良[1] 崔岩[1] 黄宁表[2] 何浩培 

机构地区：[1]大连理工大学三束材料改性国家重点实验室,大连116024 [2]香港城市大学

出　　处：《核技术》2000年第7期483-487,共5页Nuclear Techniques

摘　　要：分别采用氮离子束增强沉积和N－Ti离子束同步增强沉积工艺制备了Mo_2N和Mo_(2-x)TixN薄膜，用XRD、TEM、划痕和阳极极化方法研究了两者的结构与性能。结果表明，N－Ti离子束同步增强沉积工艺制备的Mo_(2-x)Ti_xN薄膜的膜基结合力、致密性和抗腐蚀性能均优于氮离子增强沉积的Mo_2N薄膜，Mo_(2-x)Ti_xN薄膜划痕临界载荷达3000gf，比Mo_2N薄膜提高一倍。自腐蚀电位从Mo_2N薄膜的32mV提高到Mo_(2-x)Ti_xN薄膜的166mV，自腐蚀电流相应地从0.5μA/cm^2减小到0．26μA/cm^2。Mo_(2-x)TixN薄膜的结构是Mo_2N的f.c.c结构。Some Mo2N and Mo2-xTixN films were synthesized by N ion beaxn enhanced deposition and synchronized N-Ti ion beams enhanced deposition methods respectively. The microstructure of the films was determined to be of γ -Mo2N phase by the X-ray diffraction and transmission electron diffraction experiments. The scratch tests demonstrated that the metal ion beam could effectively improve adhesion of the films. The scratch critical loading of the Mo2-xTixN film was measured to be about 3000 gf, which is about twice as large as that of the Mo2N film.The corrosion resistance of the films was analyzed by the anode polarizing tests. The corrosion-self voltage and corrosion-self current of the Mo2N film and the Moz-xTixN film in a 0.5mol/L H2SO4 solution were found to be 32mV, 0.5 p A/cm2 and 166mV, 0.26 μA/cm2 respectively. These results indicated that the corrosion resistance of the Mo2-xTixN film was much better than that of the Mo2N film.

关 键 词：离子束增强 氮化钼薄膜 制备 结构 性能 

分 类 号：O614.612[理学—无机化学] O484[理学—化学]