储氢薄膜的吸氢动力学研究  

The Kinetics of Hydrogen Interaction With Thin Films

作　　者：施立群[1] 赵国庆[1] 周筑颖[1] 汤家镛[1] 

机构地区：[1]复旦大学现代物理研究所,上海200433

出　　处：《原子能科学技术》2000年第3期216-222,共7页Atomic Energy Science and Technology

摘　　要：研究了储氢薄膜材料在两相区范围内的吸氢动力学 ,它包括 4个动力学过程 :氢在气 /固表面的化学吸附 ,氢原子的表面渗透 ,氢原子在氢化物层的扩散和金属 /氢化物界面上的氢化物生成。计算结果表明 :当吸氢压强较低时 ,反应主要受化学吸附步骤控制 ;在压强较高 (pH2 peq)和薄膜吸氢的后期 ,表面渗透、扩散和相转变步骤都有可能成为反应速率控制步骤。The kinetics of hydrogen adsorption on thin films in the two phase regions are studied. It can be classified as four steps: dissociation of hydrogen molecule and chemisorption on the gas/solid interface, surface penetration of hydrogen atoms, diffussion of hydrogen atoms through the hydride layer as well as hydride formation at the metal/hydride interface. It is shown by theoretical and experimental results that at low pressure, hydriding rate controlling step is mainly chemisorption, and at higher pressure( p H 2  p eq ) and approaching equilibrium of system, one of the other steps becomes rate determining step.

关 键 词：氢吸附 反应速率 储氢薄膜 吸氢动力学 

分 类 号：TG139.7[一般工业技术—材料科学与工程] O647.311[金属学及工艺—合金]