PSP Based DCG-FGT Transistor Model Including Characterization Procedure on Dummy Cell  

作　　者：Abderrezak Marzaki Virginie Bidal Romain Laffont Wencelas Rahajandraibe Jean-Michel Portal Rachid Bouchakour 

机构地区：[1]ST-Microelectronics, Z, de Rousset BP 2, Rousset Cedex F-13106, France [2]Institut Matriaux et Microlectronique Nanoscience de Provence, IMT Technop6le Chfiteau Gombert, Marseille F-13451, France

出　　处：《Journal of Energy and Power Engineering》2012年第11期1878-1883,共6页能源与动力工程（美国大卫英文）

摘　　要：A new DCG-FGT （dual-control-gate floating-gate transistor） transistor model for static and transient simulations is presented. The PSP MOS （metal-oxide-semiconductor） description is used as a basis for the formulation of the conduction channel behavior. The floating gate potential is implicitly computed with an added charge neutrality relation that ensures a good convergence. The model is running under electrical simulator （ELDO） and is characterized thanks to ICCAP （integrated circuit characterization and analysis program） software. It has been validated on an advanced STMicroelectronics technology. The final objective of this work is to provide an accurate and scalable model available in design framework. This device which is derived from a flash memory cell offers many possibilities for circuit design.

关 键 词：晶体管模型 虚拟单元 PSP 程序 表征 FGT 意法半导体 闪速存储器 

分 类 号：TP311.5[自动化与计算机技术—计算机软件与理论] TN722.16[自动化与计算机技术—计算机科学与技术]