硅磁敏二极管的负阻振荡特性测试与分析  

Measurement and analysis of negative resistance in silicon magnetic diode

作　　者：吴大军[1,2] 杨姗姗[2] 温殿忠[3] 

机构地区：[1]江苏省电子产品装备制造工程技术研究开发中心,江苏淮安223003 [2]淮安信息职业技术学院,江苏淮安223003 [3]黑龙江大学集成电路重点实验室,黑龙江哈尔滨150081

出　　处：《磁性材料及器件》2012年第6期55-57,共3页Journal of Magnetic Materials and Devices

基　　金：江苏省教育厅高校科技成果孵化及高新技术产业推广项目(2010-24);江苏省淮安市科技创新载体平台建设计划项目(HAP201167)

摘　　要：简要叙述了硅磁敏二极管工作原理及负阻振荡机理,设计了振荡电路,测量和分析了硅磁敏二极管的负阻振荡输出波形与温度、磁场等外界条件之间的关系。测试结果显示,重掺杂的硅磁敏二极管具有负阻振荡特性,振荡电路所产生的锯齿波的频率范围为373mHz^94.0kHz,且振荡频率与温度、磁场、电源电压及负载之间成正相关。分析表明,具有负阻特性的硅磁敏二极管满足振荡条件时,其两端的电压周期性变化,且随外界条件变化而改变,利用这些特性制成新的测量温度、湿度和磁场的复合传感器或变容器件接口电路。The theory and negative-resistance oscillation of silicon magnetic diode were briefly depicted in the paper. The Oscillation circuit was designed, and the denpendence of negative resistance characteristics of silicon magnetic diode on temperature and magnetic field was measured and analyzed. The results showed that, the high doped silicon magnetic diode exhibits negative resistance characteristics. The given oscillation circuit generates a sawtooth waveform with frequency range form 373mHz to 94.0kHz, and positive correlation is found between oscillation frequency and environment temperature, magnetic field, power supply, and load. The silicon magnetic diode produces a periodic voltage as a function of external condition if oscillation condition is met. Based on these characteristics, we can manufacture interface circuits of varactor or compound sensor for measuring signal of temperature, humidity, and magnetic field.

关 键 词：硅磁敏二极管 负阻特性 测试 传感器 

分 类 号：TN312.5[电子电信—物理电子学]