非铁电压电复合陶瓷SrTiO_3-Bi_(12)TiO_(20)(ST-BT)的正电子湮没谱学研究  

Positron annihilation spectrum study in non-ferroelectric piezoelectricity SrTiO_3-Bi_(12)TiO_(20)(ST-BT) composite ceramics

作　　者：张丽娟[1] 王力海[2] 刘建党[1] 李强[1] 成斌[1] 张杰[1] 安然[1] 赵明磊[2] 叶邦角[1] 

机构地区：[1]中国科学技术大学近代物理系,合肥230026 [2]山东大学物理学院,晶体材料国家重点实验室,济南250100

出　　处：《物理学报》2012年第23期484-489,共6页Acta Physica Sinica

基　　金：国家自然科学基金重点项目(批准号:10835006);国家自然科学基金(批准号:51172129);国家自然科学基金青年科学基金(批准号:11105139)资助的课题~~

摘　　要：采用传统陶瓷烧结工艺成功制备出新型非铁电压电复合陶瓷SrTiO_3-Bi_(12)TiO_(20)(ST-BT),利用正电子湮没技术,对ST-BT复合陶瓷烧结过程进行了研究,讨论了烧结过程中材料内部的缺陷变化特征,给出了烧结温度对该复合陶瓷结晶度和缺陷结构的影响.发现烧结温度在860—940℃,烧结时间为3 h的实验条件下,ST-BT复合陶瓷已趋于稳定,出现了大量的单空位型缺陷.烧结温度超过980℃将引起Bi_(12)TiO_(20)相的大量分解,杂相的出现造成缺陷的聚集,形成大尺度的微空洞.实验结果表明,烧结温度在920—940℃的烧结条件下,ST-BT复合陶瓷的结构特性及压电性能均表现出较好的稳定性.The positron annihilation lifetime spectroscopy, combined with X-ray diffraction and scanning electron microscopy is used to measure a new type of non-ferroelectric piezoelectricity SrTiO3-Bi12TiO20 （ST-BT） composite ceramic, which is prepared by conven- tional solid-state reaction in Shandong University. The structural characteristics and sinter process for ST-BT composite ceramic are systematically studied. A large number of crystal defects are observed in ST-BT composite ceramic with the sintering temperature be- ing between 860 to 940 ℃. The large scale defects are formed due to the Bi12TiO2o phase decomposed when the sintering temperature rises to 980 ℃. The experimental results indicate that the structural characteristic and piezoelectricity of ST-BT composite ceramic shows good stability with the sintering temperature being between 920 to 940 ℃.

关 键 词：正电子寿命谱 非铁电压电陶瓷 烧结温度 缺陷结构 

分 类 号：O469[理学—凝聚态物理]