Improvement of doping efficiency in Mg-Al_(0.14)Ga_(0.86)N/GaN superlattices with AlN interlayer by suppressing donor-like defects  

作　　者：刘宁炀 刘磊 王磊 杨薇 李丁 李磊 曹文彧 鲁辞莽 万成昊 陈伟华 胡晓东 

机构地区：[1]State Key Laboratory for Artificial Microstructure and Mesoscopic Physics,School of Physics,Peking University

出　　处：《Chinese Physics B》2012年第11期402-407,共6页中国物理B（英文版）

基　　金：Project supported by the National Natural Science Foundation of China (Grant Nos. 61076012,61076013,and 51102003);the National High Technology Research and Development Program of China (Grant No. 2007AA03Z403);the Specialized Research Fund for the Doctoral Program of Higher Education,China (Grant No. 20100001120014);the National Basic Research Program of China (Grant No. 2012CB619304)

摘　　要：We investigate the mechanism for the improvement of p-type doping efficiency in Mg-Al0.14Ga0.86N/GaN super- lattices （SLs）. It is shown that the hole concentration of SLs increases by nearly an order of magnitude, from 1.1 × 1017 to 9.3×1017 cm-3, when an AlN interlayer is inserted to modulate the strains. SchrSdinger-Poisson self-consistent calculations suggest that such an increase could be attributed to the reduction of donor-like defects caused by the strain modulation induced by the AlN interlayer. Additionally, the donor-acceptor pair emission exhibits a remarkable decrease in intensity of the cathodoluminescence spectrumlfor SLs with an A1N interlayer. This supports the theoretical calculations and indicates that the strain modulation of SLs could be beneficial to the donor-like defect suppression as well as the p-type doping efficiency improvement.We investigate the mechanism for the improvement of p-type doping efficiency in Mg-Al0.14Ga0.86N/GaN super- lattices （SLs）. It is shown that the hole concentration of SLs increases by nearly an order of magnitude, from 1.1 × 1017 to 9.3×1017 cm-3, when an AlN interlayer is inserted to modulate the strains. SchrSdinger-Poisson self-consistent calculations suggest that such an increase could be attributed to the reduction of donor-like defects caused by the strain modulation induced by the AlN interlayer. Additionally, the donor-acceptor pair emission exhibits a remarkable decrease in intensity of the cathodoluminescence spectrumlfor SLs with an A1N interlayer. This supports the theoretical calculations and indicates that the strain modulation of SLs could be beneficial to the donor-like defect suppression as well as the p-type doping efficiency improvement.

关 键 词：SUPERLATTICE doping efficiency strain modulation nitrogen vacancy 

分 类 号：O474[理学—半导体物理]