Influence of double AlN buffer layers on the qualities of GaN films prepared by metal-organic chemical vapour deposition  

作　　者：林志宇 张进成 周昊 李小刚 孟凡娜 张琳霞 艾姗 许晟瑞 赵一 郝跃 

机构地区：[1]Key Laboratory of Wide Band-Gap Semiconductor Technology,School of Microelectronics,Xidian University

出　　处：《Chinese Physics B》2012年第12期403-407,共5页中国物理B（英文版）

基　　金：Project supported by the National Key Science & Technology Special Project,China(Grant No.2008ZX01002-002);the Fundamental Research Funds for the Central Universities,China(Grant No.JY10000904009);the Major Program and State Key Program of the National Natural Science Foundation of China(Grant Nos.60890191 and 60736033)

摘　　要：In this paper we report that the GaN thin film is grown by metal-organic chemical vapour deposition on a sapphire （0001） substrate with double A1N buffer layers. The buffer layer consists of a low-temperature （LT） A1N layer and a high-temperature （HT） A1N layer that are grown at 600 ℃ and 1000 ℃, respectively. It is observed that the thickness of the LT-A1N layer drastically influences the quality of GaN thin film, and that the optimized 4.25-min-LT-A1N layer minimizes the dislocation density of GaN thin film. The reason for the improved properties is discussed in this paper.In this paper we report that the GaN thin film is grown by metal-organic chemical vapour deposition on a sapphire （0001） substrate with double A1N buffer layers. The buffer layer consists of a low-temperature （LT） A1N layer and a high-temperature （HT） A1N layer that are grown at 600 ℃ and 1000 ℃, respectively. It is observed that the thickness of the LT-A1N layer drastically influences the quality of GaN thin film, and that the optimized 4.25-min-LT-A1N layer minimizes the dislocation density of GaN thin film. The reason for the improved properties is discussed in this paper.

关 键 词：GAN A1N buffer layer metal-organic chemical vapour deposition threading dislocations 

分 类 号：TB43[一般工业技术]