底部出光纳米孔径面发射激光器的研究  

Study of bottom-emitting nano-aperture vertical-cavity surfaceemitting laser

作　　者：高建霞[1] 王岭娥[1] 

机构地区：[1]河北联合大学电气工程学院,河北唐山063009

出　　处：《光电子．激光》2012年第12期2283-2286,共4页Journal of Optoelectronics·Laser

基　　金：河北省高等学校科学技术研究青年基金(2011110)资助项目

摘　　要：在普通大功率垂直腔面发射激光器(VCSEL)基础上,制备出了底部出光纳米孔径VCSEL。利用聚焦离子束刻蚀技术完成纳米孔径的制作。当小孔直径为480nm×480nm时,测量得到器件的远场输出光功率为0.07mW。并分析了温度的变化对该器件远场输出光功率的影响。Bottom-emitting nano-aperture vertical-cavity surface-emitting lasers （VCSELs） were fabrica- ted based on common high-power VCSELs. The major fabrication steps and the structure of the device were briefly introduced. The nano-aperture was etched by the focused ion beam system and the far field output power of the device can be measured by the NA-VCSEL far field power measurement setup. When the size of the aperture is 480 nm×480 nm,the far-field output power is 0.07 mW. The fabrication process is introduced and the temperature characteristics are also analyzed.

关 键 词：垂直腔面发射激光器(VCSEL) 纳米孔径 输出光功率 温度特性 

分 类 号：TN248.4[电子电信—物理电子学]