financially supported by the National Key Research and Development Program of China(2017YFE0131500);the National Natural Science Foundation of China(61834008,61704184 and 61804164);the Key Research and Development Program of Jiangsu province(BE2020004);the Natural Science Foundation of Jiangsu Province(BK20180254);Guangdong Basic and Applied Basic Research Foundation(2019B1515120091)。
High-performance green InGaN laser diodes(LDs)are highly demanded in laser display,medical instruments,and quantum technology[1-4].However,the fabrication of green LDs is challenging,and GaN-based green LDs(λ>500 nm)...