Greatly suppressed potential inhomogeneity and performance improvement of c-plane InGaN green laser diodes  

改善势能均匀性提升c面InGaN绿光激光器性能

作　　者：Aiqin Tian Lei Hu Xuan Li Si Wu Peng Xu Dan Wang Renlin Zhou Binglei Guo Fangzhi Li Wei Zhou Deyao Li Masao Ikeda Hui Yang Jianping Liu 田爱琴;胡磊;李暄;吴思;徐鹏;王旦;周韧林;郭炳磊;李方直;周伟;李德尧;池田昌夫;杨辉;刘建平(Suzhou Institute of Nano-tech and Nano-bionics,Chinese Academy of Sciences,Suzhou 215123,China;Key Laboratory of Nanodevices and Applications,Chinese Academy of Sciences,Suzhou 215123,China;School of Nano Technology and Nano Bionics,University of Science and Technology of China,Hefei 230026,China;Guangdong(Foshan)Branch,Suzhou Institute of Nano-tech and Nano-bionics,Chinese Academy of Sciences,Foshan 528000,China)

机构地区：[1]Suzhou Institute of Nano-tech and Nano-bionics,Chinese Academy of Sciences,Suzhou 215123,China [2]Key Laboratory of Nanodevices and Applications,Chinese Academy of Sciences,Suzhou 215123,China [3]School of Nano Technology and Nano Bionics,University of Science and Technology of China,Hefei 230026,China [4]Guangdong(Foshan)Branch,Suzhou Institute of Nano-tech and Nano-bionics,Chinese Academy of Sciences,Foshan 528000,China

出　　处：《Science China Materials》2022年第2期543-546,共4页中国科学（材料科学（英文版）

基　　金：financially supported by the National Key Research and Development Program of China(2017YFE0131500);the National Natural Science Foundation of China(61834008,61704184 and 61804164);the Key Research and Development Program of Jiangsu province(BE2020004);the Natural Science Foundation of Jiangsu Province(BK20180254);Guangdong Basic and Applied Basic Research Foundation(2019B1515120091)。

摘　　要：High-performance green InGaN laser diodes(LDs)are highly demanded in laser display,medical instruments,and quantum technology[1-4].However,the fabrication of green LDs is challenging,and GaN-based green LDs(λ>500 nm)were realized by Osram Corp until 2009[5],which was 15 years after the first violet InGaN LDs.The greatest challenge is the growth of InGaN/(In)GaN multiple-quantum-well(MQW)active regions with high potential homogeneity.The potential fluctuation becomes pronounced as the indium composition increases in InGaN quantum wells(QWs)[6]due to the composition and interface fluctuation.激光显示、医疗设备及量子通信迫切需求高性能GaN基绿光激光二极管(LD).研制绿光LD最大的挑战是生长高势能均匀性的InGaN/GaN多量子阱.我们采用各种光学测量手段对绿光LD结构和芯片进行了表征.在激发功率密度为7 W cm^(-2)时,300 K下光致发光半高宽为108 meV,电流密度为20 A cm^(-2)时,电致发光半高宽为114 meV,这些研究结果表明势能均匀性得到了显著改善.同时,由变温光致发光测试得到的表征局域态分布宽度的σ值和由时间分辨光致发光测试得到的表征激子局域带尾态的E0值都很小,进一步表明势能均匀性很好.由于势能均匀性的极大改善,实现了斜率效率0.8 W A^(-1),输出光功率可以达到1.7 W的绿光LD芯片.

关 键 词：光致发光 输出光功率 绿光激光器 激光显示 量子通信 电致发光 斜率效率 光学测量 

分 类 号：TN248[电子电信—物理电子学]