32×32位三端口寄存器堆的加固设计  

Design of 32×32 Bit 3-port Hardened Register File

作　　者：宋丽丽[1] 来逢昌[1] 肖立伊[1] 

机构地区：[1]哈尔滨工业大学微电子中心,黑龙江哈尔滨150001

出　　处：《微电子学与计算机》2012年第12期27-30,35,共5页Microelectronics & Computer

摘　　要：为了克服集成电路在辐射环境下所受的影响,在SMIC0.18μm工艺下,设计一款应用于LEON3处理器核中的加固的32×32位三端口寄存器堆.存储单元内部采用改进的双向互锁存储单元(DICE)结构,外围组合电路采用C-element结构.电路模拟结果表明,室温条件下,工作电压为1.8V,寄存器堆工作在200MHz时,能够实现两读一写的功能,并能同时消除单粒子翻转(SEU)和单粒子瞬态(SET)效应.与汉明码加固方式相比,该方法具有较高的抗辐射能力和较快的速度.In this paper, a 32 × 32 bit 3-port hardened register file used in LEON3 processor is implemented in SMIC 0. 18μm CMOS technology. Memory cell is formed of DICE that is modified. Peripheral combination circuit is carried out with C-element. The results of circuit simulation show that when the register file work at 200MHz and the temperature is 27℃ with 1. 8V power supply, the function of 2-read 1-write can be implemented, and SEU, SET can be avoided at the same time. Compared with hamming coding for register file, the design has higher antiradiation ability and faster velocitv.

关 键 词：寄存器堆DICE C-element单元 单粒子翻转 单粒子瞬态 

分 类 号：TN432[电子电信—微电子学与固体电子学]