非晶FeSiB薄膜中的巨磁阻抗效应  

Giant Magneto-impedance in Amorphous FeSiB Films

作　　者：禹金强[1] 蔡炳初[1] 周勇[1] 徐东[1] 

机构地区：[1]上海交通大学信息存储研究中心

出　　处：《真空科学与技术》2000年第4期243-246,共4页Vacuum Science and Technology

摘　　要：采用射频溅射法在三组不同溅射条件下制备了FeSiB薄膜。测量了溅射薄膜的磁滞回线 ,并利用HP 41 94A阻抗分析仪 ,在 1～ 40MHz频率范围内研究了样品的巨磁阻抗效应。结果表明 :溅射条件对薄膜磁性能和巨磁阻抗效应影响很大 ,其中氩气压强为 6 65Pa ,磁场感生横向单轴磁各向异性的薄膜具有较好的软磁性能和较大的阻抗变化比值。一定温度下退火能够消除部分应力 ,阻抗变化的灵敏度能提高一倍。另外 。FeSiB films have been prepared by RF magnetron sputtering under three different sputtering conditions.Giant magneto impedance (MI) spectra of these films were investigated in the range of 1 MHz to 40 MHz.The experimental results show that,the film with uniaxial transverse magnetic anisotropy,grown at 6 65 Pa Ar pressure,gives rise to a better magnetic property and stronger MI effect among these films.The sensitivity can be doubled through stress relieved annealing.The influence of the relative angular positions between the easy axis orientation and the applied dc magnetic field on the MI effect in film with transverse anisotropy is discussed.

关 键 词：巨磁阻抗效应 磁各向异性 FeSiB薄膜 射频溅射 

分 类 号：O484.43[理学—固体物理]