微腐蚀去除硅衬底表面损伤及污染物研究  

Research of Removing the Damage and Pollutants on Si Surface by Micro Ethcing

作　　者：田巧伟[1] 檀柏梅[1] 高宝红[1] 黄妍妍[1] 刘楠[1] 苏伟东[1] 

机构地区：[1]河北工业大学微电子技术与材料研究所,天津300401

出　　处：《微纳电子技术》2012年第12期820-823,共4页Micronanoelectronic Technology

基　　金：国家自然科学基金资助项目(10676008);国家中长期科技发展规划02科技重大专项(2009zx02308)

摘　　要：硅片CMP工艺会引入表面缺陷和沾污,通常采用NaOH和KOH作为腐蚀溶液,利用微腐蚀法将硅片表面的损伤污染层剥离,以免导致IC制备过程中产生二次缺陷,但会不可避免地引入金属离子。制备了一种用螯合剂和表面活性剂复配的新型清洗液,利用螯合剂对硅片表面损伤层进行微腐蚀,同时采用表面活性剂去除硅片表面吸附的微粒。经台阶仪和原子力显微镜检测,该清洗液能有效去除硅片表面损伤层和颗粒,同时螯合剂本身不含金属离子,并且对金属离子有螯合作用,可有效避免传统腐蚀液中金属离子带来的二次污染。The CMP process will introduce the wafer surface defect and contamination, which can cause a secondary defects in IC fabrication process. The micro corrosion method can remove the damage pollution on the wafer surface, but inevitably introduces metal ions. A new cleaning solu- tion consisting of the chelant and surfactant was put forward. The silicon wafer defect damage layer was corroded by the chelant, and the silicon wafer surface adsorption of particles was removed by the surfactant. By detecting on the step tester and AFM, the test results show that the cleaning solution can effectively remove the wafer damage layer and residual particles. The cleaning solution does not contain metal ions, and can chelate with metal ions, which can effec- tively avoid the secondary pollution by the metal ion in the traditional liquid.

关 键 词：化学腐蚀 硅片清洗 表面损伤 颗粒 清洗液 

分 类 号：TN305.2[电子电信—物理电子学]