硅探测器加工中的离子注入工艺设计与控制  

Design and Control of Ion Implantation in the Fabrication of Silicon Detectors

作　　者：唐海林[1] 罗剑波[1] 张莉[1] 谭刚[1] 

机构地区：[1]中国工程物理研究院电子工程研究所,四川绵阳621900

出　　处：《微纳电子技术》2012年第12期824-828,共5页Micronanoelectronic Technology

摘　　要：应用离子注入工艺可制备获得线性电流大、窗口死层薄的硅pin辐射探测器。首先简要介绍了离子注入工艺形成pn结的原理,重点根据技术要求进行了离子注入工艺设计和计算,分别得到了注入能量为40 keV和注入剂量为4×1014/cm2的两个重要控制参数。同时分析了在离子注入工艺中存在的影响因素和相应处理方法,对生产具有良好的指导作用。采用所设计的工艺参数制备获得的硅pin辐射探测器各项技术指标均满足要求,验证了离子注入工艺设计与参数控制的有效性。The ion implantation can be used for the fabrication of silicon pin radiation detectors with thin sensitive window and large linear current. The principle of the pn junction formed by the ion implantation was introduced briefly. According to the technical requirements, the ion im- plantation process was designed and calculated. And the two important control parameters, the implantation energy of 40 keV and the implantation dose of 4 X 1014/cm2 , were obtained respec- tively. Meanwhile, the influence factors and corresponding methods were analyzed, which gives a good guide for the production. The silicon pin radiation detector was fabricated using the de- signed process parameters. And the each technical index could meet the requirement. The validi- ties of the process design and parameter control for ion implantation were verified.

关 键 词：离子注入 硅pin辐射探测器 PN结 注入能量 注入剂量 死层 

分 类 号：TN305.3[电子电信—物理电子学]