太阳能电池用多晶硅晶界的EBSD研究  

Electron Back Scattered Diffraction Study on Grain Boundaries in Polycrystalline Silicon of Solar Cells

作　　者：马会娜[1] 张智慧[1] 左玉婷[1] 杜风贞[1] 李继东[1] 

机构地区：[1]北京有色金属研究总院分析测试技术研究所,北京100088

出　　处：《材料导报》2012年第24期9-11,共3页Materials Reports

基　　金：科技部创新方法工作专项项目(2010IM031300)

摘　　要：利用电子背散射衍射(Electron back scattered diffraction,EBSD)对太阳能电池用多晶硅的晶界进行了研究。结果表明,太阳能电池用多晶硅中的大部分晶界为大角度晶界,且以特殊晶界Σ3和普通晶界为主,同时还存在少量小角度晶界。在制作太阳能电池用多晶硅时,重点要降低小角度晶界和Σ3的含量。The grain boundary in polycrystalline silicon of solar cells was studied by electron back scattered diffraction （EBSD）. The results show that most grain boundaries observed are large angle grain boundaries. ∑3 and common grain boundaries are the chief of these large angle grain boundaries. Small angle grain boundaries were also observed with a low ratio. Decrease the content of small angle grain boundaries and ∑3 in preparing polycrystalline silicon of solar cells is the emphasis.

关 键 词：太阳能电池 多晶硅 电子背散射衍射 晶界 Σ3 

分 类 号：TG115[金属学及工艺—物理冶金]