一种单光子探测器前置超宽带低噪声放大器的设计  

Design of an Ultra Wideband Low Noise Preamplifier for Single Photon Detectors

作　　者：程广明[1] 郭邦红[1] 郭建军[1] 李振华[1] 魏正军[1] 

机构地区：[1]华南师范大学信息光电子科技学院广东省微纳光子功能材料与器件重点实验室,广州510006

出　　处：《微波学报》2012年第6期57-61,共5页Journal of Microwaves

基　　金：广东省自然科学基金重点项目(10251063101000001);武汉光电国家实验室委托项目(0231187073)

摘　　要：为了进一步提高单光子探测器的性能,设计并研制了利用高电子迁移率晶体管基于混合集成负反馈结构的低成本、超宽带、低噪声前置放大器,并利用ADS软件对该放大器进行了优化和仿真。该放大器工作频段5MHz～6GHz,功率增益19.5±0.61dB,噪声系数小于2.6dB,输入电压驻波比和输出电压驻波比均小于1.8,仿真和实验结果表明该放大器可以将雪崩光电二极管上产生的亚纳秒级雪崩信号幅度放大10倍,满足单光子探测器日益提高的探测频率需求。In order to improve the performance of single photon detectors, a low cost, uhra-wideband, low noise pre- amplifier design and fabrication are developed utilizing high electron mobility transistors based on hybrid integrated negative feedback structure. Then the optimization and simulation of the preamplifier are finished using ADS. Power gain of the preamplifier is 19.5dB±0.61dB in the working band from 5MHz to 6GHz, noise coefficient is less than 2.6dB, and input/output voltage standing wave ratio is less than 1.8. The results of simulation and experiment show that the preamplifier has a ten-time amplification of amplitude for the sub-nanosecond level signal derived from avalanche photoelectric diode. So, the preamplifier can meet the increasing detection frequency demand of single photon detector.

关 键 词：单光子探测器 低噪声放大器 pHEMT(赝高电子迁移率晶体管) 负反馈 

分 类 号：TN722.3[电子电信—电路与系统]