基于GaN HEMT器件的宽带高效功率放大器  

High Efficiency Wideband Power Amplifier Based on GaN HEMT Device

作　　者：曹韬[1] 曾荣[1] 

机构地区：[1]中国工程物理研究院电子工程研究所,绵阳621900

出　　处：《微波学报》2012年第6期76-79,88,共5页Journal of Microwaves

摘　　要：介绍一种宽带高效放大器设计方法,并基于GaN HEMT器件研制了宽带高效功率放大器。采用源牵引和负载牵引方法获得适应宽带条件的最佳源阻抗和负载阻抗,然后综合宽带匹配网络并实现测试电路设计。实测结果表明,该放大器在0.9～2.7GHz工作频带范围内,放大器输出功率均大于10W,工作效率在51%～72%之间,增益大于13dB。为改善放大器线性度指标,采用商用预失真芯片搭建简单的预失真电路对放大器进行线性化校正,并给出了详细的测试结果。A design method of high efficiency wideband power amplifier is presented. A practical high efficiency wideband power amplifier circuit using GaN transistor is built. A method based on source-pull and load-pull simulation has been used to obtain optimum source and load impedances across the bandwidth and then used with a systematic approach to design wideband matching networks. Measurement results show that, across 0.9 - 2.7GHz, the amplifier circuit is able to deliver 10W outpout power with 13dB power gain and obtain 51% -72% drain efficiency. Furthermore, a simple predistortion solution is used to increase the linearity of power amplifier, and elaborate experimental results are offered.

关 键 词：高效率 宽带 GAN 功率放大器 预失真 

分 类 号：TN722.75[电子电信—电路与系统]