温度场分布对氮化铝晶体生长习性的影响  

Effect of temperature distribution on growth habit of AlN crystal

作　　者：武红磊[1] 郑瑞生[1] 闫征[1] 李萌萌[1] 郑伟[1] 

机构地区：[1]深圳大学光电工程学院,光电子器件与系统教育部重点实验室,广东省光电子器件与系统重点实验室,深圳518060

出　　处：《深圳大学学报（理工版）》2012年第6期487-491,共5页Journal of Shenzhen University(Science and Engineering)

基　　金：国家自然科学基金重点资助项目(61136001);国家重点基础研究发展计划资助项目(2010CB635115)~~

摘　　要：研究升华法制备氮化铝晶体过程中,生长区域温度场分布对晶体生长习性的影响.结果表明,当升华区与结晶区之间的温差较大时,氮化铝晶体的生长方向为c轴方向,显露面为c面;反之,温差较小时,氮化铝晶体的生长方向为与c轴垂直的a轴方向,显露面为m面.同时,生长区域温度场分布还影响晶体的生长尺寸和质量.在自行设计的双区电阻加热晶体生长装置中,通过精确控制升华区与结晶区之间的温度场,实现厘米级m面非极性氮化铝单晶体的制备,并对样品进行测试分析.The effect of temperature distribution on A1N sublimation growth union to growth habit has been studied in this paper. With the larger temperature difference between sublimation region and crystalline region, the growth direction of A1N was along c-axis. On the contrary, the growth direction was along a-axis. Meantime, the temperature distribution also had an effect on crystal size and quality. The nonpolar m-plane A1N single crystals with the size about 1 cm had been grown by sublimation and characterized. The growth furnace was designed by ourselves, this device contained two resistance heaters, heating sublimation region and crystalline region, respectively.

关 键 词：半导体材料 氮化铝 升华法 非极化 温度场 晶体生长 

分 类 号：O782[理学—晶体学]