集成电路开短路失效原因探讨  

Failure Cause Research on IC Open and Short Circuit

作　　者：李兴鸿[1] 赵俊萍[1] 赵春荣[1] 赖世波[1] 

机构地区：[1]北京微电子技术研究所,北京100076

出　　处：《电子产品可靠性与环境试验》2012年第6期20-24,共5页Electronic Product Reliability and Environmental Testing

摘　　要：对过电应力引起的CMOS集成电路的开短路失效模式,从电路结构、导电通路、误操作等方面进行了失效原因探讨。列举了一些过电应力的来源,说明了电压或电流幅度很小也可导致过电应力烧毁,从而说明了根据失效模式来寻找过电应力来源的困难性。对失效分析、故障归零将有很好的参考价值。From the aspects of circuit composition, the path of current, misuses etc, failure causes of the open and short circuit failure modes caused by electrical overstress （EOS） in CMOS ICs is discussed in this paper. Some root causes of EOS is listed, explaining that very. low w）hage or current may also lead to EOS melting damage. It is very hard to research the root cause of EOS only aceording to failure modes. The paper may be a good reference for failure analysis and root cause eliminating.

关 键 词：数字集成电路 过电应力 开路 短路 

分 类 号：TN432[电子电信—微电子学与固体电子学]