100nm GaAsMHEMT器件研制  

Fabrication of 100 nm T-gate GaAs MHEMTs

作　　者：康耀辉[1] 徐筱乐[1] 高建峰[1] 陈辰[1] 

机构地区：[1]南京电子器件研究所,微波毫米波单片集成和模块电路重点实验室,南京210016

出　　处：《固体电子学研究与进展》2012年第6期548-550,589,共4页Research & Progress of SSE

摘　　要：应用电子束直写技术成功制作了栅长100nm的高性能In0.52Al0.48As/In0.53Ga0.47As GaAs MHEMT(渐变组分高电子迁移率晶体管)。从工艺角度,结合器件的小信号等效电路的理论分析,优化了器件T形栅尺寸与工艺,从而减小了器件寄生参数,达到了较好的器件性能。最终制作的In0.52Al0.48As/In0.53Ga0.47As MHEMT饱和电流达到460mA/mm,夹断电压-0.8V,在Vgs为-0.23V时的最大非本征跨导gm为940mS/mm,截止频率ft达到220GHz,最大振荡频率fmax大于200GHz。In this work, a 100 nm In0.52Alo.48As/In0.53Ga0.47As GaAs metamorphic high elec- tron mobility transistors（MHEMTs） was fabricated using E-beam lithography. With a view to developing the process of manufacturing, and based on the device small-signal equivalent circuit theory, the device structure is optimized especially T-gate configuration resulting in decrease o{ the device parasitic parameter, and then obtained the perfect performance. Some key perfor- mances of this In0.szA10.48As/Ino.s3Gao.47As MHEMTs are as follows： high saturation current den- sity around 460 mA/mm, threshold voltage of -0.8 V, high value of peak extrinsic transconduc- tance （gin） Of 940 mS/mm at a gate voltage of-0. 23 V, peak f, of 220 GHz and the correspond- ing fmax higher than 200 GHz.

关 键 词：渐变组分高电子迁移率晶体管 T形栅 截止频率 

分 类 号：TN386[电子电信—物理电子学]