一种基于Lange耦合器的S波段小型化集成功放  

A S-band Miniaturized Integrated PA Based on Lange Coupler Technology

作　　者：林川[1] 杨斌[1] 苑小林[1] 高群[1] 

机构地区：[1]南京电子器件研究所,南京210016

出　　处：《固体电子学研究与进展》2012年第6期565-568,共4页Research & Progress of SSE

摘　　要：设计了一种全部采用国产芯片研制的小型化集成功放模块。该模块采用一种全新的结构模式,通过Lange耦合器将GaAs MMIC单片、单电源GaAs功率芯片和硅功率芯片混合集成,使得其体积比同等性能的功率放大器减小。测试结果表明,在工作电压36V、脉宽300μs、占空比10%的测试条件下,2.7～3.1GHz或3.1～3.4GHz带内输出功率均能达到50W,36V电源效率大于40%。A S-band miniaturized integrated PA module based on lange coupler technology is presented with domestic chips. The module employes a new structure integrated by a GaAs MMIC, a medium-power GaAs chip driven by single power supply and a Silicon power chip through a Lange coupler. Measured results show the developed device can deliver 50 W output power over 2.7~3.1 GHz or 3.1~3.4 GHz band at 300us pulse width, 10% duty cycle, 36 V operate voltage, with more than 40% drain efficiency.

关 键 词：小型化 LANGE耦合器 功放 集成 

分 类 号：TN75[电子电信—电路与系统] TN722.75