4～20GHz超宽带低噪声放大器单片电路  

4-20 GHz Ultra Broadband Low Noise Amplifier MMIC

作　　者：许春良[1] 王绍东[1] 柳现发[1] 高学邦[1] 

机构地区：[1]中国电子科技集团公司第十三研究所,石家庄050051

出　　处：《半导体技术》2013年第1期6-9,共4页Semiconductor Technology

基　　金：国家重点基础研究发展计划资助(2009CB320200)

摘　　要：采用分布式放大器设计原理,基于GaAs PHEMT低噪声工艺技术,研制了一款超宽带低噪声放大器单片电路。该款放大器选用分布式拓扑结构,由五级电路构成,为了进一步提高分布式放大器的增益,在每一级又采用了两个场效应晶体管(FET)串联结构。放大器采用了自偏压单电源供电,因为每级有两个FET串联,自偏压电路更为复杂,通过多个电阻分压的方式确定了每个FET的工作点。测试结果表明,该放大器在频率4～20 GHz内,增益大于14 dB,噪声系数小于3.0 dB,增益平坦度小于±1.0 dB,输入驻波比小于1.5∶1,输出驻波比小于1.8∶1,1 dB压缩点输出功率大于10 dBm。放大器的工作电压为8 V,电流约为50 mA,芯片面积为2.0 mm×2.0 mm。Based on the distributed amplifier design theory, a ultra broadband low noise amplifier monolithic microwave integrated circuit （MMIC） was designed and fabricated in GaAs PHEMT low noise process. In order to exhibit the higher gain, each stage of this 5-stage LNA also adopted two field effect transistors （2-FETs） serial structure. The amplifier required single power supply by adopting self-bias circuit. Self-bias circuit is much more complicated because of the 2-FETs serial structure. The static operating point of each FET was set by multi-resister biasing network. The test results show that the gain is 14 dB, the gain flatness is lower than ± 1.0 dB, the noise figure is lower than 3.0 dB, the input VSWR is lower than 1.5：1, the output VSWR is lower than 1.8：1, and output power is greater than 10 dBm at ldB compression over the frequency band of 4 -20 GHz. The amplifier requires about 50 mA and8 V power supply. The chip size is 2.0 mm×2.0mm.

关 键 词：超宽带 低噪声放大器 行波 微波单片集成电路 砷化镓赝配高电子迁移率晶体管 

分 类 号：TN43[电子电信—微电子学与固体电子学] TN722.3