基于载流子注入的SOI4×4MMI-MZ光开关阵列  

A 4×4 MMI-MZ optical switch matrix on SOI based on carrier injection

作　　者：杨健[1,2] 陈伟伟[1,3] 王皖君[1] 王明华[1] 杨建义[1] 

机构地区：[1]浙江大学信息与电子工程学系唐仲英传感材料与应用研究中心,浙江杭州310027 [2]贵州大学理学院,贵州贵阳550025 [3]宁波大学信息学院,浙江宁波315211

出　　处：《光电子．激光》2013年第1期16-20,共5页Journal of Optoelectronics·Laser

基　　金：国家自然科学基金(60977043);国家“863”计划(2012AA012203)资助项目

摘　　要：采用0.8μm CMOS工艺线制作了一种基于载流子注入的SOI 4×4马赫-曾德(MZ)光开关阵列,其由4个2×2基于多模干涉(MMI)耦合器的MZ(MMI-MZ)光开关单元组成。通过对调制臂施加电压,利用Si的载流子色散效应引起调制区的折射率变化实现开关功能。测试结果表明,当输入光为1 510～1 580nm的宽带光源时,光开关阵列的不同路径间的串扰低于-8.02dB,支持的公共带宽为35nm(1 530～1 565nm),开关阵列的上升和下降时间分别为17.4ns和21ns。In this paper, a 4 × 4 optical switch matrix fabricated on silicon-on-insulator （SOD water by a based on free carrier dispersion effect is designed and 0. 8μm standard commercial CMOS line. It consists of four electro-optic 2 × 2 multimode imaging-based Mach-Zehnder interferometers. As a basic unit, the proposed switch matrix can be extended to n× n matrix switch and used in both optical space-division and optical time-division switching networks. The two paired MMIs in each Mach-Zehnder structure are used as 3 dB power splitters and combiners. Each switching element is electrically driven with an independent extermal power supply. By injecting free carriers into phase shifter with the active forward P-i n diode, the π phase shift required for switching action is achieved. Experimental results show that the 4 × 4 silicon photonic switch matrix has the crosstalk level lower than 8. 02 dB with a common spectral bandwidth as large as 35 nm,which is from 1530 nm to 1565 nm. Furthermore,when a specific square wave signal with 10%-90% transition time of 5 ns is loaded,the switching response time is measured to be 17.4 ns for the rising edge and 21 ns for the falling edge,respectively.

关 键 词：光开关阵列 马赫-曾德(MZ) 多模干涉(MMI)耦合器 SOI 载流子色散 

分 类 号：TN256[电子电信—物理电子学]